CONDUCTIVITY OVER LOCALIZED STATES OF SOLID SOLUTIONS TlSe1-xSx (x = 0.1) IRRADIATED WITH -QUANTA
Keywords:
hopping conductivity, gamma radiation, density of localized states, concentration of deep traps, energy difference of localized states, average hop lengthAbstract
In the presented study, the effect of gamma rays on the conductivity of the TlSe1-xSx (x=0.1) solid solution in localized states in a constant electric field was studied. The study was carried out using an E7-25 impedance meter. The electrical conductivity of TlSe1-xSx (x=0.1) solid solutions irradiated with gamma quanta was studied in the temperature interval of 100-300 K and the temperature intervals of the jump conductivity were determined. It has been shown that in certain temperature intervals before and after irradiation, conduction occurs in localized states near the Fermi level. Based on the Mott approximation, the conductivity parameters were calculated: the density of localized states (NF) near the Fermi level, the concentration of deep traps (Nt), the energy difference of localized states (ΔE), as well as the values of the average length of charge carrier jumps (R) were calculated and compared.
