PHASE ANALYSIS OF GaSe SINGLE CRYSTALS CARRIED OUT BY NEW ELECTRON DIFFRACTION'S METHOD OF ROTATION

Abstract

The electron diffraction patterns of GaSe single – crystal films (SCF) obtained by their rotation around the axis perpendicular to the film's plane which are inclined at an angle φ from perpendicular position to the incident electron beam as well as electron diffraction patterns obtained by rotation of SCF around axis α^* of reciprocal lattice perpendicularly positioned to the electron beam have been studied. On contrary the electron diffraction patterns of oblique textures in which the reflection series superimpose and therefore it is impossible to diversify ε and β polytypes, we can clearly determine different polytype modifications on SCF obtained by flaking off the crystal adhesive tape synthesized by Bridgman method. These are ε (sp. gr. P6 m2) and β(sp. gr. P6₃mc) ones with lattice parameters: α=3,76 ⁰A , c= 15,95 ⁰A .