DEEP DONOR CENTERS IN COMPLEXLY DOPED GERMANIUM-LIKE Ge-Si CRYSTALS

Abstract

On the basis of Hall measurements it is shown that in complexly doped

Ge_1-xSi_x <Cu, Zn> (0≤x≤0.13) crystals, quenched after heat treatment at 1070-1100 К, deep donor centers are formed. Activation energy of the donor centers equal to Е_d =Е_с -93 meV in Ge and to Е_d =Е_с -104 meV in Ge_0.87Si_0.13 and rises linearly with Si content in the crystals. On the basis of the obtained results it is shown that the deep donor centers most likely formed by pairing of interstitial Cu and substitutional Zn atoms (Cu_iZn_s)